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FCMT099N65S3 - N-Channel MOSFET

General Description

SUPERFET III MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Key Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 87 mW.
  • Ultra Low Gate Charge (Typ. Qg = 56 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 500 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription for FCMT099N65S3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FCMT099N65S3. For precise diagrams, and layout, please refer to the original PDF.

MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 30 A, 99 mW FCMT099N65S3 Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−jun...

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RFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the switching power applications such as server / telecom power, adaptor and solar inverter applications. The Power88 package is an ultra−slim surface−mount package (1 mm high) with a low profile and small footprint (8x8 mm2).

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